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Gallium Arsenide (GaAs)-Sputtering Target

Gallium Arsenide (GaAs)-Sputtering Target

CAS: 1303-00-0
Molecular Formula: GaAs
Purity: 99.999%
Products Code: TR313300ST
Specification Model: 2 inch dia x 0.125 inch th.etc
Hazardous Class: Class 6.1
EINECS No.: 215-114-8
UN No.: UN1557
Package Class: PG II
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Gallium Arsenide (GaAs)-Sputtering Target introduce:

Characteristic




Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct band gap semiconductor with a zinc blende crystal structure.




Chemical formula:GaAs

Molar mass:144.645 g/mol

Appearance:Gray crystals

Odor:garlic-like when moistened

Density:5.3176 g/cm3

Melting point:1,238 °C (2,260 °F; 1,511 K)

Solubility in water:insoluble

Solubility:soluble in HCl

                   insoluble in ethanol, methanol, acetone

Band gap:1.441 eV (at 300 K)

Electron mobility:9000 cm2/(V·s) (at 300 K)

Magnetic susceptibility (χ):-16.2×10−6 cgs

Thermal conductivity:0.56 W/(cm·K) (at 300 K)

Refractive index (nD):3.3

Crystal structure:Zinc blende




Application




Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.




GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.
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