Gallium Phosphide (GaP)-Sputtering Target introduce:
Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.24 eV at room temperature. Impure polycrystalline material has the appearance of pale orange or grayish pieces. Undoped single crystals are orange, but strongly doped wafers appear darker due to free-carrier absorption. It is odorless and insoluble in water.
Molar mass：100.697 g/mol
Appearance：pale orange solid
Melting point：1,457 °C (2,655 °F; 1,730 K)
Solubility in water：insoluble
Band gap：2.24 eV (indirect, 300 K)
Electron mobility：300 cm2/(V·s) (300 K)
Magnetic susceptibility (χ)：-13.8×10−6 cgs
Thermal conductivity：0.752 W/(cm·K) (300 K)
Refractive index (nD)：2.964 (10 µm), 3.209 (775 nm), 3.590 (500 nm), 5.05 (354 nm)
Crystal structure：Zinc blende
Sulfur or tellurium are used as dopants to produce n-type semiconductors. Zinc is used as a dopant for the p-type semiconductor.
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