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Silicon Carbide (SiC)-Wafer
  • Silicon Carbide (SiC)-Wafer

Silicon Carbide (SiC)-Wafer

Molecular Formula: SiC
Purity: 99-99.9%
Products Code: TR140600WF
Specification Model: 4''/6''
EINECS No.: 206-991-8
CAS: 409-21-2
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Silicon Carbide (SiC)-Wafer introduce:

Characteristic:

Silicon carbide (SiC), also known as carborundum /kɑːrbəˈrʌndəm/, is a semiconductor containing silicon and carbon. It occurs in nature as the extremely rare mineral moissanite.

Chemical formula:SiC

Molar mass:40.096 g·mol−1

Appearance:Yellow to green to bluish-black, iridescent crystals

Density:3.16 g·cm−3 (hex.)

Melting point:2,830 °C (5,130 °F; 3,100 K)

Solubility:Insoluble in water, soluble in molten alkalis and molten iron

Electron mobility:~900 cm2/V·s (all polytypes)

Magnetic susceptibility (χ):−12.8·10−6 cm3/mol

Refractive index (nD):2.55 (infrared; all polytypes)


Application:
Synthetic SiC powder has been mass-produced since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Electronic applications of silicon carbide such as light-emitting diodes (LEDs) and detectors in early radios were first demonstrated around 1907. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both. Large single crystals of silicon carbide can be grown by the Lely method and they can be cut into gems known as synthetic moissanite.

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