Zirconium Oxide ZrO2 powder CAS 1314-23-4

About Zirconium Oxide ZrO2 powder:Zirconium oxide (ZrO2), sometimes known as zirconia (not to be confused with zircon), is a white crystalline oxide of zirconium. Its most naturally occurring form, with a monoclinic crystalline structure, is the mineral baddeleyite. A dopant stabilized cubic structured zirconia, cubic zirconia, is synthesized in various colors for use as a gemstone…

FORESTALL-LQ-(MH)

About FORESTALL-LQ-(MH):It has the dual nature of cationic and non-ionic, has a good solubilization effect, can be compounded with a variety of surfactants, reduces the amount of solubilizer added in the formula, and improves the cloud point of the formula. In addition, this product also has good wettability and spreadability, and can effectively improve the…

Sorbitan monostearate CAS 1338-41-6

About Sorbitan monostearate:The Ministry of Health of the People’s Republic of China issued the National Food Safety Standard for Sorbitan monostearate on November 21, 2011. The current standard number is GB 19301-2010. The standard replaced GB 13481-2010 “Food Safety National standard food Additives Sorbitan monostearate (Simpan 60)” (now abolished), since December 21, 2011, began to…

MAX Special Ceramics Material Titanium Aluminum Nitride Ti4AlN3 Powder

Titanium Aluminum Nitride Ti4AlN3 Powder has high strength and elastic modulus, high thermal conductivity and electrical conductivity, and good workability.Technical Parameter of Titanium Aluminum Nitride Ti4AlN3 Powder :Product NameMFPurityParticle SizeMolecular WeightMelting PointColorTitanium Aluminum NitrideTi4AlN399%200mesh, 400meshN/AN/AGray Black  How is Titanium Aluminum Nitride Ti4AlN3 Powder Produced? 1. Weighing niobium powder, aluminum powder and toner, and then ball-milling mixed powder; 2. The mixed…

Indium Tin Oxide ITO Powder

About Indium Tin Oxide ITO Powder:Indium tin oxide (ITO) is a ternary composition of different ratios of indium, tin and oxygen. According to the oxygen content, it can be described as ceramic or alloy. Usually encountered indium tin oxide as an oxygen-saturated composition, its formulation is 74% In, 18% O2 and 8% Sn by weight….

Bismuth Nanoparticles Nano Bi Powder CAS 7440-69-9

About Bismuth Nanoparticles Nano Bi Powder:Bismuth nanoparticles are a kind of metal nanoparticles with colors from dark gray to black according to the different particle sizes. Bismuth is a silvery, crystalline, brittle metal when freshly produced and it often presents a pinkish tinge in the air. Bismuth is the most diamagnetic element, and its thermal conductivity is…

Hafnium Nitride HfN Powder CAS 25817-87-2

About Hafnium Nitride HfN Powder:Hafnium nitride is a gray powder with a cubic crystal structure. Melting point 3310℃, microhardness 16GPa.It is fairly stable but easily corroded by aqua regia, concentrated sulfuric acid and hydrofluoric acid. It is produced by direct reaction of hafnium with nitrogen at 900℃, or by reaction of hafnium halides with ammonia…

Calcium Nitride Ca3N2 Powder CAS 12013-82-0

About Calcium Nitride Ca3N2 powderIn most cases, calcium nitride is usually available in large volumes. Kmpass provides a wide range of products for hydrogen storage research, advanced fuel cells, and battery applications. Hydrogen is easily produced from renewable energy sources and is the most abundant element in the universe. Hydrogen comes from many sources, such…

AES0810 Sodium octyl decyl alcohol ether sulphate

About Sodium octyl decyl alcohol ether sulphate:Sodium octyl decyl alcohol ether sulphate  is easily soluble in water, has good dispersibility, and has excellent decontamination, emulsification, penetration and foaming properties.Kmpass is a trusted global Sodium octyl decyl alcohol ether sulphate. Feel free to send an inquiry to get the latest price of Sodium octyl decyl alcohol ether…

Titanium Silicide TiSi2 Powder CAS 12039-83-7

About Titanium Silicide TiSi2 Powder:With the rapid development of large integrated circuits (ULSI), the size of the equipment and equipment is getting smaller, the requirements for equipment size, film quality, and thickness uniformity are getting higher.At present, the wire width of the semiconductor device has been reduced to less than 0.1 μm, so it is impossible to…